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| Semiconductor THN6702F SiGe NPN Transistor SOT-89 Unit in mm Applications - VHF and UHF wide band amplifier Features - Medium power application (2W) - Power gain GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm Output power POUT = 33.5 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz 4 3 2 1 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 15 10 1.5 900 2 150 -65 ~ 150 Unit V V V mA W 1 Thermal Characteristics Symbol Rth j-a Parameter Thermal Resistance from Junction to Ambient THN6702F Value 65 Unit K/W Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Power Gain Output Power Collector Efficiency IEBO hFE GP POUT C Test Conditions VCB = 10 V, IE = 0 mA VCE = 7 V, IB = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 3 V, IC = 100 mA VCE = 6.0 V, IC = 30 mA (RF off), f = 460 MHz, PIN=0dBm VCE = 6.0 V, IC = 30 mA (RF off), f = 460 MHz, PIN=20dBm VCE = 6.0 V, IC = 30 mA (RF off), f = 460 MHz, PIN=20dBm Min. 60 13 32 15 33.5 55 Typ. Max. 2.5 1.5 1.5 180 dB dBm % Unit hFE Classification Marking hFE Value PD1 60 -180 2 THN6702F Application Information ( at f = 460 MHz ) Operation Mode CW, class-AB f (MHz) 460 VCE (V) 6.0 POUT (dBm) 33.5 GP (dB) 13.5 C (%) 55 Output Power, Collector Current, Collector Efficiency vs. Input Power 35 1000 800 30 POUT 25 20 IC 600 400 15 C 10 0 5 10 15 20 200 0 Input Power, PIN (dBm) Collector Efficiency, C (%) Collector Current, IC (mA) , Output Power, POUT (dBm) VCE = 6V, f = 460 MHz IC(set) = 30mA 3 THN6702F Test Circuit Schematic Diagram ( f = 460 MHz ) VBE 1 nF 100 pF 100 pF 1 nF VCE 0.5 X 1.5 X 6T 100 nH W=1.3 mm L=16 mm 15 pF 13 pF 27 pF W=1.3 mm L=31 mm 100 pF RF OUT RF IN 100 pF W=1.3 mm L=32 mm W=1.3 mm L=6.8 mm W=1.3 mm L=1.8 mm Evaluation Board ( f = 460 MHz ) VBE VCE RF IN RF OUT Notes 1. FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm 2. Evaluation board dimension = 119 50 mm2 4 |
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